深圳超互联思维电子有限公司 | 会员登录 | 新会员注册
TI德州仪器代理分销商 我们只做全新原装正品
CSD87502Q2T  N 通道 MOSFET Dual NChannel NexFET Power MOSFETs
  |  0 订单数量
单价
3.50  / PCS
发货方式
 圆通快递 5元起步 (全国)
 顺丰快递 23元起步(全国)
 速尔快递 13元起步(全国)
 中通快递 5元起步(全国)
 无需物流(送货上门)限华强北市场
需求数量
 PCS
总金额
合计 ¥3.50
 
电机驱动器
产品详情
型号CSD87502Q2T
封装WSON-6
品牌TEXAS INSTRUMENTS
年份16+
产品描述N 通道 MOSFET Dual N-Channel NexFET Power MOSFETs
 规格书点击查看

 

CSD87502Q2T Datasheet, PDF

Electronic Manufacturer Part no Datasheet Electronics Description
Texas Instruments
Texas Instruments
CSD87502Q2T [Old version datasheet] Dual N-Channel NexFET Power MOSFETs
Texas Instruments
Texas Instruments
CSD87501L [Old version datasheet] CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET
CSD87501LT [Old version datasheet] CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET
CSD87501L_15 [Old version datasheet] CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET
CSD87502Q2 [Old version datasheet] CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs
CSD87502Q2 [Old version datasheet] Dual N-Channel NexFET Power MOSFETs
CSD87588N [Old version datasheet] Synchronous Buck NexFET Power Block II
CSD87588N [Old version datasheet] CSD87588N Synchronous Buck NexFET Power Block II
CSD87588NT [Old version datasheet] CSD87588N Synchronous Buck NexFET Power Block II
CSD87588N_15 [Old version datasheet] CSD87588N Synchronous Buck NexFET Power Block II
 
CSD87502Q2T Datasheet, PDF More

 

 

Texas Instruments CSD87502Q2

The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.

 

 

德克萨斯仪器csd87502q2
的csd87502q2是一个30 V,27米ΩN沟道器件在儿子2 x 2毫米的塑料封装的双独立MOSFET。两个FET被设计用来在一个半桥配置同步降压等电源中的应用。此外,这些nexfet功率MOSFET可用于适配器,USB输入保护,和充电电池的应用。双场效应晶体管具有低漏源电阻,最大限度地减少损失,为空间受限的应用低元件数。

¥ 3.50 (USD)/PCS
¥ 3.50 (USD)/PCS
 
 
 

www.cn.int-thinking.net©2006-2017深圳超互联思维电子有限公司(版权所有)