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TLC272IDRG4  运算放大器 IC OPAMP GP 2.2MHZ 8SOIC
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放大器
产品详情
型号TLC272IDRG4
封装8-SOIC
品牌Texas Instruments
年份18+
描述运算放大器 IC OPAMP GP 2.2MHZ 8SOIC
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Texas Instruments TLC272IDR

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

德克萨斯仪器tlc272idr
TLC272和tlc277精密双运算放大器结合广泛的输入失调电压等级低失调电压漂移、高输入阻抗、低噪声、速度接近通用的BiFET设备。
这些设备使用德克萨斯仪器硅栅LINCMOS™技术,它提供了偏置电压稳定性远超稳定性与传统的金属栅工艺。
非常高的输入阻抗,低偏置电流,高摆率使这些高性价比的设备的理想以前保留的BiFET和NFET产品应用。四偏置电压等级可供选择(架C -后缀和i-suffix类型),从低成本的TLC272(10 mV)的高精度tlc277(500 UV)。这些优点,结合良好的共模抑制和电源电压抑制,使这些设备是一个不错的选择,新的最先进的设计,以及升级现有的设计。
总的来说,双极技术相关的许多功能都可以在LINCMOS™运算放大器没有双极技术的功率代价。一般应用如传感器接口、模拟计算、放大器模块、有源滤波器、信号缓冲是容易设计和tlc277 TLC272。该器件还具有低电压单电源操作,使它们非常适合远程和无法访问的电池供电的应用。共模输入电压范围包括负轨。
广泛的封装选项,包括小轮廓和芯片载体版本的高密度系统应用。
该设备的输入和输出的设计,以承受- 100毫安浪涌电流没有持续闭锁。
TLC272和tlc277纳入内部ESD保护电路,防止功能故障在电压高达2000 V在规定的测试下,方法3015.2;但是,要小心处理这些设备暴露于ESD行使可能导致设备性能参数的退化。
这架C -后缀器件的特点是操作从0°C 70°C. i-suffix器件的特点是从–40°C 85°C. m-suffix器件的特点是运行在–55°C完整的军用温度范围为125°C.操作
 
 
 

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